论文标题
在合金过渡金属二分裂基质上石墨烯中的石墨烯中的邻近旋转轨道耦合
Proximity spin-orbit coupling in graphene on alloyed transition metal dichalcogenides
论文作者
论文摘要
石墨烯中可忽略的固有自旋轨道耦合（SOC）可以通过在石墨烯和过渡金属二进制二进制二进制二色质（TMDC）的堆叠异质结构中的接近效应来增强。 TMDC层的组成在确定石墨烯层引起的SOC的性质和强度方面起着关键作用。在这里，我们研究了接近性诱导的SOC的演变，因为故意缺陷TMDC层。合金的$ {\ rm g/w_χmo_{1-χ} se_2} $异质结构具有多种组成（$χ$），并且使用密度函数理论模拟了缺陷分布。与连续体和紧密结合模型进行比较，可以阐明金属原子合金的局部和全局特征。我们的发现表明，尽管对单个缺陷的局部参数进行了一些戏剧性的扰动，但低能自旋和电子行为遵循一个简单的有效培养基模型，该模型仅取决于TMDC层中金属物种的组成比。此外，我们证明了这种合金系统的拓扑状态可以通过控制该比率来可行地调节。
The negligible intrinsic spin-orbit coupling (SOC) in graphene can be enhanced by proximity effects in stacked heterostructures of graphene and transition metal dichalcogenides (TMDCs). The composition of the TMDC layer plays a key role in determining the nature and strength of the resultant SOC induced in the graphene layer. Here, we study the evolution of the proximity-induced SOC as the TMDC layer is deliberately defected. Alloyed ${\rm G/W_χMo_{1-χ}Se_2}$ heterostructures with diverse compositions ($χ$) and defect distributions are simulated using density functional theory. Comparison with continuum and tight-binding models allows both local and global signatures of the metal-atom alloying to be clarified. Our findings show that, despite some dramatic perturbation of local parameters for individual defects, the low-energy spin and electronic behaviour follow a simple effective medium model which depends only on the composition ratio of the metallic species in the TMDC layer. Furthermore, we demonstrate that the topological state of such alloyed systems can be feasibly tuned by controlling this ratio.
