论文标题
霍尔效应各向异性在HO0.8LU0.2B12的顺磁性阶段，由动态电荷条带诱导
Hall effect anisotropy in the paramagnetic phase of Ho0.8Lu0.2B12 induced by dynamic charge stripes
论文作者
论文摘要
在HO0.8LU0.2B12的顺磁性阶段电荷转运的详细研究密切相关的抗fiferromagnet在温度下在1.9-300 K的温度下，在高达80 KOE的磁场中进行。 Four mono-domain single crystals with different orientation of normal vectors to the lateral surface of Ho0.8Lu0.2B12 samples were investigated in order to establish the changes in Hall effect due to the anisotropy, induced by (i) the electronic phase separation (dynamic charge stripes) and (ii) formation of the disordered cage-glass state below 60 K. It was demonstrated that in magnetic fields above 40 kOe directed along the 001 FCC晶体中的110轴除了普通的负霍尔电阻率贡献外，还出现了相当大的固有各向异性阳性成分兰克西。关系Ranxy Prop。发现RANXX 1.7在沿低于60 K的001的电阻率张量的异常组件与Power Law Ranxy Prop之间。在低于15 k的温度下，在110沿110的方向H中检测到RANXX 0.83。有人认为，在ts左右的ts下，可能会以大小尺寸的固定量的形成，即在粉状结构（条纹）指控（分散层面上的大型固定型物的形成）解释异常的奇数ranxy（t），甚至是电阻率启动器的一部分。我们假设这些兰克西（001）和兰克西（110）组件分别代表了内在的（浆果相位贡献）和外部（偏斜散射）机制。对HALL信号中普通和各向异性组件的异常霍尔效应（AHE）的额外铁磁贡献进行了注册，并归因于HO0.8LU0.2B12的HO0.8LU0.8LU0.8LU0.2B12的5D状态（铁磁纳米域）的磁极化的影响。
A detailed study of charge transport in the paramagnetic phase of Ho0.8Lu0.2B12 strongly correlated antiferromagnet was carried out at temperatures 1.9-300 K in magnetic fields up to 80 kOe. Four mono-domain single crystals with different orientation of normal vectors to the lateral surface of Ho0.8Lu0.2B12 samples were investigated in order to establish the changes in Hall effect due to the anisotropy, induced by (i) the electronic phase separation (dynamic charge stripes) and (ii) formation of the disordered cage-glass state below 60 K. It was demonstrated that in magnetic fields above 40 kOe directed along the 001 and 110 axes in fcc crystals a considerable intrinsic anisotropic positive component Ranxy appears in addition to the ordinary negative Hall resistivity contribution. The relation Ranxy prop. Ranxx 1.7 was found between anomalous components of the resistivity tensor for H along 001 below 60 K, and the power law Ranxy prop. Ranxx 0.83 was detected for the orientation H along 110 at temperatures T below TS about 15 K. It is argued that below TS about 15 K the anomalous odd Ranxy(T) and even Ranxx(T) parts of the resistivity tensor may be interpreted in terms of formation of a large size clusters in the filamentary structure of fluctuating charges (stripes). We assume that these Ranxy(001) and Ranxy(110) components represent the intrinsic (Berry phase contribution) and extrinsic (skew scattering) mechanism, respectively. An additional ferromagnetic contribution to anomalous Hall effect (AHE) for both ordinary and anisotropic components in Hall signal was registered and attributed to the effect of magnetic polarization of 5d states (ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12.
