论文标题

ganb $ _4 $ se $ _8 $和gata $ _4 $ se $ se $ _8 $

Antipolar transitions in GaNb$_4$Se$_8$ and GaTa$_4$Se$_8$

论文作者

Winkler, M., Prodan, L., Tsurkan, V., Lunkenheimer, P., Kézsmárki, I.

论文摘要

我们介绍了Lacunar Spinels GANB4SE8和GATA4SE8的介电,极化,电阻率,比热和磁化率数据,具有大量自旋轨耦合的四面体簇基材料。如先前报道的Isoelectronic GANB4S8,我们集中于在这些化合物中可能发生的抗多极顺序,其中自旋轨道耦合起着不太重要的作用。我们的宽带介电光谱研究揭示了两个系统中磁结构过渡的内在电介质常数的明显异常,这与对抗极性过渡的期望一致。在NB化合物的立方立方体过渡上也观察到类似的异常,导致中间相。类似于其他极性和抗多极的lacunar尖晶石,我们发现在低温下偶性松弛动力学的适应症。 GANB4SE8上的极化测量结果显示,磁性结构过渡下方的铁电序弱,要么叠加到抗多极顺序或在结构域壁处出现。温度依赖性的DC电阻率证据本质上是热激活的电荷转运,具有不同相的激活能。在TA化合物的磁结构过渡时,电阻率的逐步增加指向电子结构的根本变化或电荷传输的机理。在低温下,电荷运输受隙内杂质状态的控制,也被调用以解释这些化合物中的电阻转换。

We present dielectric, polarization, resistivity, specific heat, and magnetic susceptibility data on single crystals of the lacunar spinels GaNb4Se8 and GaTa4Se8, tetrahedral cluster-based materials with substantial spin-orbit coupling. We concentrate on the possible occurrence of antipolar order in these compounds, as previously reported for the isoelectronic GaNb4S8, where spin-orbit coupling plays a less important role. Our broadband dielectric-spectroscopy investigations reveal clear anomalies of the intrinsic dielectric constant at the magneto-structural transitions in both systems that are in accord with the expectations for antipolar transitions. A similar anomaly is also observed at the cubic-cubic transition of the Nb compound leading to an intermediate phase. Similar to other polar and antipolar lacunar spinels, we find indications for dipolar relaxation dynamics at low temperatures. Polarization measurements on GaNb4Se8 reveal weak ferroelectric ordering below the magneto-structural transition, either superimposed to antipolar order or emerging at structural domain walls. The temperature-dependent dc resistivity evidences essentially thermally-activated charge transport with different activation energies in the different phases. A huge step-like increase of the resistivity at the magneto-structural transition of the Ta compound points to a fundamental change in the electronic structure or the mechanism of the charge transport. At low temperatures, charge transport is governed by in-gap impurity states, as also invoked to explain the resistive switching in these compounds.

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