论文标题
HGCDTE晶体中疾病诱导的拓扑相变
Disorder-induced topological phase transition in HgCdTe crystals
论文作者
论文摘要
使用自洽的天生近似，我们研究了由于随机分布的杂质和CD组成中的波动而引起的散装HGCDTE晶体中出现的拓扑相变。通过遵循状态密度的进化，我们清楚地证明了拓扑相变，可以从凯恩·费米斯（Kane Fermions）的杂物质量质量质量来理解。我们发现，HGCDTE晶体中的重孔带的存在导致拓扑相过渡的障碍强度要比常规的3D拓扑绝缘子所预期的要低得多。我们的理论结果也可以应用于其他狭窄的狭窄锌 - 混合半导体，例如INAS，INSB及其三元合金INASSB。
Using the self-consistent Born approximation, we study a topological phase transition appearing in bulk HgCdTe crystals induced \emph{uncorrelated} disorder due to both randomly distributed impurities and fluctuations in Cd composition. By following the density-of-states evolution, we clearly demonstrate the topological phase transition, which can be understood in terms of the disorder-renormalized mass of Kane fermions. We find that the presence of heavy-hole band in HgCdTe crystals leads to the topological phase transition at much lower disorder strength than it is expected for conventional 3D topological insulators. Our theoretical results can be also applied to other narrow-gap zinc-blende semiconductors such as InAs, InSb and their ternary alloys InAsSb.
