论文标题
basno $ _ {3} $/srnbo $ _ {3} $接口的高移动性二维电子气
High Mobility Two-Dimensional Electron Gas at the BaSnO$_{3}$/SrNbO$_{3}$ Interface
论文作者
论文摘要
氧化二维电子气体（2DEGS）承诺在半导体（例如Basno $ _ {3} $（BSO））中高电荷载体浓度和低损耗的电子传输。 ACBN0计算BSO/SRNBO $ _ {3} $（SNO）接口显示NB-4 $ \ textIt {d} $ electron注入到Extended Sn-5 $ \ textit {s} $ electaronic状态中。传统带的最小值由SN-5 $ \ textit {s} $状态〜1.2 eV低于费米水平的中间厚度6个单元/6个单元/6个单元的SNO SNO SNO SNO SERLATTICES，对应于BSO中的电子密度〜10 $^{21}} $ CM $^{ - 3} $。通过分子束外延生长的类似SNO/BSO接口的实验研究证实了从SNO到BSO的大量电荷转移。 $ \ textIt {intu} $ angle分辨X射线光电光谱研究显示，电子密度为〜4 $ \ times $ 10 $^{21} $ cm $^{ - 3} $。理论和实验的一致性表明，BSO/SNO接口为2DEGS中低损耗电子传输提供了新颖的材料平台。
Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO$_{3}$ (BSO). ACBN0 computations for BSO/SrNbO$_{3}$ (SNO) interfaces show Nb-4$\textit{d}$ electron injection into extended Sn-5$\textit{s}$ electronic states. The conduction band minimum consists of Sn-5$\textit{s}$ states ~1.2 eV below the Fermi level for intermediate thickness 6-unit cell BSO/6-unit cell SNO superlattices, corresponding to an electron density in BSO of ~10$^{21}$ cm$^{-3}$. Experimental studies of analogous SNO/BSO interfaces grown by molecular beam epitaxy confirm significant charge transfer from SNO to BSO. $\textit {In situ}$ angle-resolved X-ray photoelectron spectroscopy studies show an electron density of ~4 $\times$ 10$^{21}$ cm$^{-3}$. The consistency of theory and experiment shows that BSO/SNO interfaces provide a novel materials platform for low loss electron transport in 2DEGs.
