论文标题
磁性拓扑晶体管利用层选择性传输
Magnetic topological transistor exploiting layer-selective transport
论文作者
论文摘要
我们提出了一个基于MNBI $ _ {2} $ TE $ _ {4} $的磁性拓扑晶体管，其中“ ON”状态（量化电导率）和“ OFF”状态（零电导率）可以通过更改两个相邻电场的相对方向（Parallel vseal vs。对抗管型）在两端式endine中使用。我们解释说，提出的磁性拓扑晶体管依赖于一种新的机制，这是由于Mnbi $ _ {2} $ te $ _ {4} $的拓扑，磁性和自由度的相互作用。它的性能在很大程度上取决于薄膜厚度和磁性的类型。我们表明，由于表面状态的拓扑性质，晶体管的“ on”和“ off”状态具有强大的对抗。我们的工作为基于拓扑范德华的层次选择传输的应用开放了一条途径。
We propose a magnetic topological transistor based on MnBi$_{2}$Te$_{4}$, in which the "on" state (quantized conductance) and the "off" state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs. antiparallel) applied within a two-terminal junction. We explain that the proposed magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and layer degrees of freedom in MnBi$_{2}$Te$_{4}$. Its performance depends substantially on film thickness and type of magnetic order. We show that "on" and "off" states of the transistor are robust against disorder due to the topological nature of the surface states. Our work opens an avenue for applications of layer-selective transport based on the topological van der Waals antiferromagnet MnBi$_{2}$Te$_{4}$.
