论文标题
使用双屏障阳极结构，横向Algan/Gan Schottky屏障二极管具有0.36 V转式电压和10 kV击穿电压
A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure
论文作者
论文摘要
在这封信中，我们在蓝宝石底物上展示了横向Algan/Gan Schottky障碍物（SBD），其转交压（VON）和高击穿电压（VBK）。通过使用由铂（PT）和坦塔尔（TA）的混合物形成的双屏障阳极（DBA）结构，SBD的VON可以低至0.36 V，泄漏电流为2.5e-6 A/mm。在蓝宝石上的高质量碳掺杂的GAN缓冲液的支持下，VBK的阳极间距为85μm，可以达到10 kV。将VBK和特定的抗性（RON，SP）组合为25.1MΩ.cm^2，SBD的功能功率图可以达到4.0 GW/cm^2，这表明在超高高速电子电子中应用具有很大的潜力。
In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a double barrier anode (DBA) structure formed by the mixture of Platinum (Pt) and Tantalum (Ta), the Von of the SBD can be as low as 0.36 V with a leakage current of 2.5E-6 A/mm. Supported by the high-quality carbon-doped GaN buffer on sapphire, the VBK can reach more than 10 kV with the anode-to-cathode spacing of 85 μm. Combining the VBK and the specific on-resistance (Ron,sp) of 25.1 mΩ.cm^2, the power figure of merit of the SBD can reach 4.0 GW/cm^2, demonstrating a great potential for the application in ultra-high-voltage electronics.
