学术文献库

Background: Edge-on-irradiated silicon detectors are currently being investigated for use in photon-counting CT applications. The low atomic number of silicon leads to a significant number of incident photons being Compton scattered in the detector, depositing a part of their energy and potentially being counted multiple times. Although the physics of Compton scatter is well established, the effects of Compton interactions in the detector on image quality for an edge-on-irradiated silicon detector have still not been thoroughly investigated. Purpose: To investigate and explain effects of Compton scatter on zero-frequency DQE for photon-counting CT using edge-on-irradiated silicon detectors. Methods: We extend an existing Monte Carlo model of an edge-on-irradiated silicon detector to develop projection and image domain performance metrics for pure density and pure spectral imaging tasks. We show that the lowest energy threshold of the detector can be used as an effective discriminator of primary counts and cross-talk caused by Compton scatter. We study the developed metrics as functions of the lowest threshold energy. Results: Density imaging performance decreases monotonically as a function of the lowest threshold in both projection and image domains. Spectral imaging performance has a plateau between 0 and 10 keV and decreases monotonically thereafter, in both projection and image domain. Conclusions: Compton interactions contribute significantly to the density imaging performance of edge-on-irradiated silicon detectors. With the studied detector topology, the benefit of counting primary Compton interactions outweighs the penalty of multiple counting at all lower threshold energies. Compton interactions also contribute significantly to the spectral imaging performance for measured energies above 10 keV.