论文标题
量子自旋材料中电荷掺杂剂的影响
Effects of charge dopants in quantum spin Hall materials
论文作者
论文摘要
半导体对静电门控和兴奋剂的敏感性解释了它们在信息通信和新能量技术中的广泛使用。被定量证明，没有可调节的参数表明，顺磁受体掺杂剂的存在阐明了二维拓扑半导体在拓扑相变和量子旋转霍尔效应方面的各种令人困惑的特性。电荷相关性，库仑间隙，电导电子和孔之间的交换相互作用的概念，近托效应的强耦合极限以及绑定的磁极层解释了短拓扑保护长度，与电子迁移率相比，高孔的迁移率以及HGTE和HGTE和（HG，MN，Mn）TE量子孔的旋转霍尔的不同温度依赖性。
Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence of paramagnetic acceptor dopants elucidates a variety of hitherto puzzling properties of two-dimensional topological semiconductors at the topological phase transition and in the regime of the quantum spin Hall effect. The concepts of charge correlation, Coulomb gap, exchange interaction between conducting electrons and holes localized on acceptors, strong coupling limit of the Kondo effect, and bound magnetic polaron explain a short topological protection length, high hole mobilities compared with electron mobilities, and different temperature dependence of the spin Hall resistance in HgTe and (Hg,Mn)Te quantum wells.
