论文标题
超高芯片超级弯曲从签名 - 偏置波导产生
Ultra-Efficient On-Chip Supercontinuum Generation from Sign-Alternating-Dispersion Waveguides
论文作者
论文摘要
片上完全集成的超局部来源对于启用应用程序，例如便携式和机械稳定的医学成像设备，化学传感和激光雷达至关重要。然而，当前超局部生成方案的低效率阻止了完全芯片的整合。在这封信中，我们提出了一个方案，其中集成超局部生成的输入能量需求通过数量级大幅度降低，对于500至1000 nm的带宽生成。通过签名在CMOS兼容氮化硅波导中的分散体，我们通过达到3800的因素来提高效率。我们表明，高光谱能量在高光谱能量（例如，1/e水平）上大带宽超级产生的脉冲能量需求（例如，1/e水平）从Nanojoujoules降低到6 picojoules。降低的脉冲能量需求使芯片集成激光源（例如模式锁定的异质性或混合二极管激光器）可以用作泵源，从而使能够完全集成的芯片高链环宽度超宽大源。
Fully integrated supercontinuum sources on-chip are critical to enabling applications such as portable and mechanically-stable medical imaging devices, chemical sensing and LiDAR. However, the low-efficiency of current supercontinuum generation schemes prevent full on-chip integration. In this letter, we present a scheme where the input energy requirements for integrated supercontinuum generation is drastically lowered by orders of magnitude, for bandwidth generation of the order of 500 to 1000 nm. Through sign-alternating the dispersion in a CMOS compatible silicon nitride waveguide, we achieve an efficiency enhancement by factors reaching 3800. We show that the pulse energy requirement for large bandwidth supercontinuum generation at high spectral energy (e.g., 1/e level) is lowered from nanojoules to 6 picojoules. The lowered pulse energy requirements enables that chip-integrated laser sources, such as mode-locked heterogeneously or hybrid integrated diode lasers, can be used as a pump source, enabling fully integrated on-chip high-bandwidth supercontinuum sources.
