论文标题
晶格与Zngen $ _2 $和MGSIN $ _2 $的各向异性增强孔移动性。
Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN$_2$ and MgSiN$_2$
论文作者
论文摘要
实现氮化壳综合（GAN）电子设备的关键障碍是其低孔迁移率。在这里，我们探讨了通过在最近可用的II-IV氮化物材料的外延匹配中提高GAN孔流动性的可能性，这些材料（即Zngen $ _2 $和MGSIN $ _2 $）。我们使用Ab Itible Boltzmann传输方程对GAN的孔迁移率进行最新计算。我们表明，通过与Zngen $ _2 $和MGSIN $ _2 $的晶格匹配沿$ [1 \ bar {1} 00] $沿$ [1 \ bar {1} 00] $的有效的单轴压缩应变，从而导致了重孔带和分裂孔带的反转，从而降低了压缩方向的有效孔质量。我们发现，与未经培训的GAN相比，分别与Zngen $ _2 $和MGSIN $ _2 $匹配的格子匹配可以使室温孔移动性增加50％和260％。研究趋势是应变的函数，我们发现迁移率的变化是高度非线性的。与Zn $ _ {0.75} $ ge $ _ {0.75} $ mg $ _ {0.25} $ _ {0.25} $ si $ _ {0.25} $ n $ _2 $匹配的晶格匹配Zn $ _ {0.75} $ ge $ _ {0.75} $ mg $ _ {0.25} $
The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have recently become available, namely ZnGeN$_2$ and MgSiN$_2$. We perform state-of-the-art calculations of the hole mobility of GaN using the ab initio Boltzmann transport equation. We show that effective uniaxial compressive strain of GaN along the $[1\bar{1}00]$ by lattice matching to ZnGeN$_2$ and MgSiN$_2$ results in the inversion of the heavy hole band and split-off hole band, thereby lowering the effective hole mass in the compression direction. We find that lattice matching to ZnGeN$_2$ and MgSiN$_2$ induces an increase of the room-temperature hole mobility by 50% and 260% as compared to unstrained GaN, respectively. Examining the trends as a function of strain, we find that the variation in mobility is highly nonlinear; lattice matching to a hypothetical solid solution of Zn$_{0.75}$Ge$_{0.75}$Mg$_{0.25}$Si$_{0.25}$N$_2$ would already increase the hole mobility by 160%.
