论文标题
基于无机氧化物的电阻随机访问记忆设备的最新进展
Recent advances in inorganic oxides-based resistive random-access memory devices
论文作者
论文摘要
内存一直是信息技术的基础元素。人工智能，大数据，物联网等新兴技术需要一种新颖的记忆技术，该技术可以节能并具有异常的数据保留期。在几种现有的记忆技术中，电阻随机访问记忆（RRAM）是上述问题的答案，因为有必要拥有RAM和不挥发性的速度的组合，因此证明是在下一代非挥发性RAM应用中替换闪存的最有前途的候选人之一。这篇综述讨论了用RRAM做出的现有挑战和技术进步，包括开关机理，设备结构，耐力，抗疲劳性，数据保留期以及用作介电层的无机氧化物材料中电阻转换的机制。最后，介绍了对未来研究的摘要和观点。
Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy efficient and have an exception data retention period. Among several existing memory technologies, resistive random-access memory (RRAM) is an answer to the above question as it is necessary to possess the combination of speed of RAM and nonvolatility, thus proving to be one of the most promising candidates to replace flash memory in next-generation non-volatile RAM applications. This review discusses the existing challenges and technological advancements made with RRAM, including switching mechanism, device structure, endurance, fatigue resistance, data retention period, and mechanism of resistive switching in inorganic oxides material used as a dielectric layer. Finally, a summary and a perspective on future research are presented.
