论文标题
INAS/GASB/INAS Trilayer量子井中量子散射时间的电压控制
Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
论文作者
论文摘要
我们基于INAS/GASB/INAS TRILAYER量子井在拓扑绝缘子中通过门电压训练研究量子散射时间的演变。根据在门电压周期中施加的最小门电压，量子散射时间可以从0.08 PS提高到50％至0.12 ps，尽管传输散射时间在1.0 ps左右相当恒定。量子散射时间与传输散射时间的比率与电荷载体密度线性尺度，并且从10到30不等，表明库仑散射是主要的散射机制。我们的发现可能可以改善剩余的散装电导率问题，并有助于根据INAS/GASB量子量井的异质结构在拓扑绝缘体中观察螺旋边缘通道，甚至用于宏观镜头设备。
We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal gate voltage applied during a gate voltage sweep cycle, the quantum scattering time can be improved by 50 % from 0.08 ps to 0.12 ps albeit the transport scattering time is rather constant around 1.0 ps. The ratio of the quantum scattering time versus transport scattering time scales linearly with the charge carrier density and varies from 10 to 30, indicating Coulombic scattering as the dominant scattering mechanism. Our findings may enable to improve the residual bulk conductivity issue and help in observing helical edge channels in topological insulators based on InAs/GaSb quantum well heterostructures even for macroscopic devices.
