论文标题
半导体系统中的分数量子厅效应
Fractional quantum Hall effect in semiconductor systems
论文作者
论文摘要
分数量子大厅(FQH)效应是指在二维的电子中实现的强烈相关现象和相关的物质量相,位于大型垂直磁场中的电子气体中。在这样的系统中,拓扑结构和量子力学共同引起外来物理学,这些物理学通过强大的大厅耐药性量化而表现出来。在本章中,我们概述了基于GAAS的半导体材料中FQH效应的实验现象学,并在试验波函数,复合费米昂准粒子和神秘的非阿布尔国家中介绍了其理论解释。我们还强调了一些最新的发展,包括Parton理论和FQH状态的Dirac复合费场理论,各向异性和几何自由度的作用以及FQH流体中的量子纠缠。
The fractional quantum Hall (FQH) effect refers to the strongly-correlated phenomena and the associated quantum phases of matter realized in a two-dimensional gas of electrons placed in a large perpendicular magnetic field. In such systems, topology and quantum mechanics conspire to give rise to exotic physics that manifests via robust quantization of the Hall resistance. In this chapter, we provide an overview of the experimental phenomenology of the FQH effect in GaAs-based semiconductor materials and present its theoretical interpretations in terms of trial wave functions, composite fermion quasiparticles, and enigmatic non-Abelian states. We also highlight some recent developments, including the parton theory and the Dirac composite fermion field theory of FQH states, the role of anisotropy and geometrical degrees of freedom, and quantum entanglement in FQH fluids.