论文标题
在离子间隙纳米膜中通过多相偏振的界面电阻转换
Interfacial resistive switching by multiphase polarization in ion-intercalation nanofilms
论文作者
论文摘要
非易失性电阻转换（RS）的记忆有望通过内存计算彻底改变硬件体系结构。最近，作为其离子调节的电子电导率的潜在RS材料，离子间隔材料引起了人们的关注。在这封信中，我们通过在离子阻断电极之间的离子间隔薄膜的多相偏振（MP）提出RS，其中由施加的电压开关触发了电子转移电阻的界面相距。我们开发了一个电化学相位模型，用于模拟离子电子传输和离子调节的电子转移速率，并使用它来分析MP开关电流和时间，电阻比和电流 - 电压响应。该模型能够重现钛酸锂（LTO）回忆录的复杂循环伏安图，该模型无法通过基于大量介电介质分解的现有模型来解释。该理论预测了多相离子间歇度材料的可实现的开关速度，可用于指导高性能MP基于MP的RS记忆的设计。
Nonvolatile resistive-switching (RS) memories promise to revolutionize hardware architectures with in-memory computing. Recently, ion-interclation materials have attracted increasing attention as potential RS materials for their ion-modulated electronic conductivity. In this Letter, we propose RS by multiphase polarization (MP) of ion-intercalated thin films between ion-blocking electrodes, in which interfacial phase separation triggered by an applied voltage switches the electron-transfer resistance. We develop an electrochemical phase-field model for simulations of coupled ion-electron transport and ion-modulated electron-transfer rates and use it to analyze the MP switching current and time, resistance ratio, and current-voltage response. The model is able to reproduce the complex cyclic voltammograms of lithium titanate (LTO) memristors, which cannot be explained by existing models based on bulk dielectric breakdown. The theory predicts the achievable switching speeds for multiphase ion-intercalation materials and could be used to guide the design of high-performance MP-based RS memories.
