论文标题
操纵超纯净近红外量子光生的层间激子
Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation
论文作者
论文摘要
在原子上薄的半导体界面形成的层间激子（IXS）具有各种新型特性。在平行的发展中，纳米级应变工程已成为创建2D量子光源的有效手段。探索这两个令人兴奋的领域的交汇处，在该区域中，应利用应变和缺陷来操纵IX在新功能的出现方面，目前处于新生阶段。在这里，使用MOS2/WSE2异质结构作为模型系统，我们演示了如何利用应变，缺陷和分层来创建能够在技术上重要的近红外光谱范围内具有明亮，稳健且可调的量子光发射的缺陷IX。我们能够以G（2）（0）= 0.01实现超高的单光子纯度。我们从缺陷结合IXS创建位点控制的QE的策略代表了2D量子光子研究的范式转移，从单层结构中的工程内层激子到2D异质结构的界面的IXS。
Interlayer excitons (IXs) formed at the interface of atomically-thin semiconductors possess various novel properties. In a parallel development, nanoscale strain engineering has emerged as an effective means for creating 2D quantum light sources. Exploring the intersection of these two exciting areas, where strain and defects are exploited for the manipulation of IX toward the emergence of new functionalities, is currently at a nascent stage. Here, using MoS2/WSe2 heterostructure as a model system, we demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. We were able to achieve ultra-high single-photon purity with g(2)(0) = 0.01. Our strategy of creating site-controlled QEs from the defect-bound IXs represents a paradigm shift in 2D quantum photonics research, from engineering intralayer exciton in monolayer structures towards IXs at the interface of 2D heterostructures.
