论文标题
III-V多孔太阳能电池的稀薄锗底物
Thinned Germanium Substrates for III-V Multijunction Solar Cells
论文作者
论文摘要
多期太阳能电池通常在GE底物上生长。这意味着几个缺点阻碍了整个多函数的性能并限制其可能的应用程序。底物引起的缺点是:较重的设备,较高的操作温度,较低的性能和缺乏光子限制。在这项工作中,我们建议将基材稀疏作为上述挑战的有效解决方案。使用2D TCAD工具模拟了底物厚度对多功的GE子电池性能的影响。仿真结果指出后表面重组是增强稀薄GE子细胞发展的关键参数。 GE底物已被稀释,可实现115μm厚的样品。最后,已经从稀薄的底物中制造了太阳能电池,证明了有限的降解,并显示了该过程生产GE子细胞的可行性,最高为115μm。
Multijunction solar cells are usually grown on Ge substrates. This implies several disadvantages that hinder the performance of the whole multijunction and limit their possible applications. The drawbacks caused by the substrate are: heavier devices, higher operation temperatures, lower performance and lack of photon confinement. In this work we propose thinning the substrate as a valid solution to the aforementioned challenges. The influence of the substrate thickness on the Ge subcell performance inside a multijunction is simulated using 2D TCAD tools. Simulation results point to the back surface recombination as the key parameter to enhance the development of thinned Ge subcells. Ge substrates have been thinned down, achieving 115μm thick samples. Finally, solar cells have been manufactured out of the thinned substrates proving a limited degradation and showing the feasibility of this process to manufacture Ge subcells thinned down up to 115μm.