论文标题
双层石墨烯单晶的逐层生长通过自传输催化活性启用
Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity
论文作者
论文摘要
大区域垂直堆叠的二维(2D)范德华(VDW)材料的直接生长是其在集成电子,光电子和光伏的高端应用的先决条件。目前,通过在各种单一晶体基质的各种单晶底物上的外观增长来实现单晶石墨烯(MLG)(MLG)(MLG)(MLG)(MLG)(MLG)(MLG)(MLG)和六边形硼的单层。但是,原则上,单层外延的成功似乎极难被复制到双层或几层生长,因为据信第一层的全部覆盖范围终止了采用催化金属表面的人的反应性。在这里,我们报告了大尺寸双层石墨烯单晶的逐层化学蒸气沉积(CVD)生长,该生长是通过从铂(PT)表面到最外面石墨烯层的自变量催化活性来实现的。在控制良好的环境下,原位生长和实时监视实验明确验证了该生长确实遵循MLG/PT的开放表面上的逐层模式(111)。第一原理计算表明,石墨烯叠加仪和PT表面之间的明显电子杂交允许催化活性的传输,从而实现了碳氢化合物的催化分离,然后将其自由基在最外层SP2碳表面上直接直接绘画。这种自传输的催化活性也被证明是在制造单晶石墨烯双层,三层和四层层以及H-BN的几层中对管型融合CVD具有鲁棒性的。我们的发现为垂直堆叠的几层2D单晶的潜在可控,逐层和晶圆尺度增长提供了出色的策略。
Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by self-transmitting catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This self-transmitting catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.