论文标题
半导体纳米结构中高谐波产生的两粒子紧密结合描述
Two-Particle Tight-Binding Description of Higher-Harmonic Generation in Semiconductor Nanostructures
论文作者
论文摘要
我们开发了一种量子机械理论，以描述半导体纳米结构的光学响应，并特别强调高阶谐波产生。基于紧密结合方法，我们考虑了所有两个粒子相关性，从而描述了电子和孔的创造，进化和an灭。在批量材料的限制情况下，我们获得了与求解良好的半导体Bloch方程相同的精度。对于有限范围的半导体结构，我们还结合了周围空间，从而可以描述电子发射。此外，我们结合了不同的弛豫机制，例如对电倒流电流的脱去和阻尼。此外，我们描述的优点是，从极其精确的材料数据开始，例如，从从密度官能理论计算中获得的紧密结合参数开始，我们获得了一个数值描述，其计算挑战性和资源为可比的Ab-initio方法，例如，基于时间依赖性密度函数函数函数型理论。
We develop a quantum mechanical theory to describe the optical response of semiconductor nanostructures with a particular emphasis on higher-order harmonic Generation. Based on a tight-binding approach we take all two-particle correlations into account thus describing the creation, evolution and annihilation of electron and holes. In the limiting case of bulk materials, we obtain the same precision as that achieved by solving the well-established semiconductor Bloch Equations. For semiconducting structures of finite extent, we also incorporate the surrounding space thus enabling a description of electron emission. In addition, we incorporate different relaxation mechanisms such as dephasing and damping of intraband currents. Moreover, the advantage of our description is that, starting from extremely precise material data as e.g., from tight-binding parameters obtained from density-functional-theory calculations, we obtain a numerical description being by far less computationally challenging and resource-demanding as comparable ab-initio approaches, e.g., those based on time-dependent density functional theory.
