论文标题
使用Van der Waals抗铁磁MNPX3（x：s，se）实现电场驱动的“一材料”磁性隧道连接
Realization of the electric-field driven "one-material"-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX3 (X: S, Se)
论文作者
论文摘要
目前，许多努力致力于研究新的二维磁性材料，这被认为是实现未来电子设备和旋转型设备的有希望。但是，这些材料在不同交界处的利用需要复杂的处理，在许多情况下，这些处理会导致不必要的寄生效应，从而影响交界的性能。在这里，我们提出了一种新的优雅方法，以实现“一材料”的磁性隧道连接点。使用2D Van der Waals Mnpx3（x：s，se）的几层，它使用了其基态下绝缘的抗铁磁铁，并且使用了施加的外部电气归档的效果导致半金属铁磁状态对于MNPX3堆栈的最外层。这种磁性隧道连接的丰富状态图允许精确控制其隧道电导率。已实现的“基于单物质”的磁性隧道连接处允许避免在材料界面处与晶格不匹配和载体散射效应相关的所有效果，从而为在电子和旋转基质中应用此类系统提供了高度的观点。
Presently a lot of efforts are devoted to the investigation of new two-dimensional magnetic materials, which are considered as promising for the realization of the future electronics and spintronics devices. However, the utilization of these materials in different junctions requires complicated processing that in many cases leads to unwanted parasitic effects influencing the performance of the junctions. Here, we propose the new elegant approach for the realization of the "one-material"-based magnetic tunnel junction. The several layers of 2D van der Waals MnPX3 (X: S, Se), which is insulating antiferromagnet in its ground state, are used and the effect of the applied external electric filed leads to the half-metallic ferromagnetic states for the outermost layers of the MnPX3 stack. The rich states diagram of such magnetic tunnel junction permits to precisely control its tunneling conductivity. The realized "one-material"-based magnetic tunnel junction allows to avoid all effects connected with the lattice mismatches and carriers scattering effects at the materials interfaces, giving high perspectives for the application of such systems in electronics and spintronics.
