论文标题
通过与碳和质子共植入的硅中的单个G中心
Single G centers in silicon fabricated by co-implantation with carbon and proton
论文作者
论文摘要
我们报告了在光学电信波长下与单个光子发射兼容的硅中G中心的制造。我们的样品是由硅在绝缘子晶圆上制成的，该晶体晶圆局部用碳离子和质子在各种液体下植入。减少植入式通力使能够逐渐从大型合奏转换为孤立的单个缺陷，达到G中心的面积密度降低到$ \ sim $ \ sim $ 0.2 $μ$ m $ m $^{ - 2} $。通过在强度相关实验中的光子抗挑战来证明单个缺陷的创造，从而确立了我们的方法作为可再现的程序，用于在硅中生成单个人工原子以用于量子技术。
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $μ$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.
