论文标题
基于P-I-N结构的高度制造INP的极化光束分离器
Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure
论文作者
论文摘要
在这项工作中，在INP平台上呈现了一种新型的高度制造耐极极化光束分离器（PBS）。为了实现分裂，我们将Pockels效应和等离子体分散效应结合在对称的1x2 Mach-Zehnder干涉仪（MZI）中。 MZI的一个P-i-N相变驱动器以正向偏置驱动，以利用血浆分散效应并修改TE和TM模式的相位。 MZI的另一臂以反向偏置驱动，以利用仅影响TE模式的Pockels效应。通过调整两个相变器的电压，可以为TE和TM模式设置不同的干扰条件，从而在MZI的输出处将它们分开。通过调节电压，可以放松完全被动PBS已知的非常紧密的制造公差。实验结果表明，在完整的C波段（1530-1565nm）上，灭绝率优于15 dB，芯片损失为3.5 dB。
In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. To achieve the splitting, we combine the Pockels effect and the plasma dispersion effect in a symmetric 1x2 Mach-Zehnder interferometer (MZI). One p-i-n phase shifter of the MZI is driven in forward bias to exploit the plasma dispersion effect and modify the phase of both the TE and TM mode. The other arm of the MZI is driven in reverse bias to exploit the Pockels effect which affects only the TE mode. By adjusting the voltages of the two phase shifters, a different interference condition can be set for the TE and the TM modes thereby splitting them at the output of the MZI. By adjusting the voltages, the very tight fabrication tolerances known for fully passive PBS are eased. The experimental results show that an extinction ratio better than 15 dB and an on-chip loss of 3.5 dB over the full C-band (1530-1565nm) are achieved.
