论文标题
一种简单的技术，用于评估四面体半导体中Bloch状态的偶极矩
A simple technique for evaluating dipole moments of Bloch states in tetrahedral semiconductors
论文作者
论文摘要
非中央对称材料中电子状态的永久性偶极矩在许多现象中起着关键作用。正确评估它们的任务是一项艰巨的任务，通常需要充分了解乐队结构，并了解浆果曲率的复杂概念。在这里，我们表明，在少数情况下（例如锌混合物和Wurtzite）可以使用L Hopital规则对永久性偶极矩进行相当容易的第一原则分析派生，并且可以使用lopatiate ulue luh ture ludiate统计，并且可以使用几个可广泛可用的材料参数来发现这些偶极子在高对称点附近的值和分散。结果有望有助于更好地理解转移电流，光学整流和其他电流现象。
Permanent dipole moments of electronics states in non-centro-symmetric materials play pivotal role in many phenomena. Correctly evaluating them presents an arduous task and usually requires full knowledge of the band structure as well as understanding the intricate concepts of Berry curvature. Here we show that in a few cases (e.g. zinc blende and wurtzite) a rather facile first-principle analytical derivation of the permanent dipole moments using L Hopital rule can be performed, and the values and dispersion of these dipoles near high symmetry points can be found using just a couple of widely available material parameters. The results will hopefully contribute to better understanding of shift currents, optical rectification and other electro-optical phenomena.
