论文标题
基于HBN/（ga）TE的新型宽光谱吸收器异质结构
Novel wide spectrum light absorber heterostructures based on hBN/In(Ga)Te
论文作者
论文摘要
二维基团III单一核化合物最近因其广泛的光学和电特性而引起了人们的关注，这是光电和新型的电气应用的有前途的候选者，但是以原始形式非常敏感，非常敏感并且容易受到空气中的氧气。在这里，我们提出了两个新设计的VDW异质结构，基于HBN（Hexagonal Boron Nitride）和Gate或Inte Monolayer。使用密度函数理论，我们研究了这些结构的电子和光学特性。它们的中等带隙和良好的吸收系数使它们非常适合广泛的吸收剂，从IR的一部分到远的紫外线频谱，并具有特别好的紫外线。可能有益于保护敏感门和Inte的HBN层不仅可以保留其光学特性，而且可以增强它。此外，我们确认堆叠类型不会影响任何相关属性，因为所有三种堆叠类型的总能量非常相似，并且每一个堆叠类型几乎相同。这对于更轻松的实验实现尤其重要。
Two-dimensional group III monochalcogenides have recently attracted quite attention for their wide spectrum of optical and electric properties, being promising candidates for optoelectronic and novel electrical applications, however in their pristine form they are very sensitive and vulnerable to oxygen in air. Here we present two newly designed vdW heterostructures based on hBN (hexagonal boron nitride) and GaTe or InTe monolayer. Using density functional theory we investigate electronic and optical properties of those structures. Their moderate band gap and an good absorption coefficient makes them excellent for absorbers in wide spectrum, covering all from part of IR to far UV spectrum, with particularly good absorption of UV light. The hBN layer which can be beneficial for protection of sensitive GaTe and InTe does not only preserve their optical properties but also enhances it. Moreover, we confirm that type of stacking does not affect any relevant properties, as all three stacking types are very similar in total energy and bandstructure is almost the same for every one. This is especially important for easier experimental realization.
