论文标题
CE掺杂（LA，PR）OBIS2单晶的超导性研究
Investigation of superconductivity in Ce-doped (La,Pr)OBiS2 single crystals
论文作者
论文摘要
CE掺杂的单晶（LA，PR）OBIS2超导体，多差稀土元件取代了Robis2，已成功生长。生长的晶体通常具有1-2毫米的尺寸，并且具有发达的C平面的板状形状。通过X射线吸收光谱分析，检测到所获得的（LA，CE，PR）OBIS2单晶所获得的C轴晶格常数约为13.6-13.7 a，CE和PR的超导过渡温度为1.23-2.18 K. CE和PR的价波动。与（CE，PR）OBIS2和（LA，CE）OBIS2相比，（LA，CE，PR）OBIS2的超导过渡温度随着RITITE处四含量状态的浓度而增加。
Single crystals of Ce-doped (La,Pr)OBiS2 superconductors, multinary rare-earth elements substituted ROBiS2, were successfully grown. The grown crystals typically had a size of 1-2 mm and a plate-like shape with a well-developed c-plane. The c-axis lattice constants of the obtained (La,Ce,Pr)OBiS2 single crystals were approximately 13.6-13.7 A, and the superconducting transition temperature was 1.23-2.18 K. Valence fluctuations of Ce and Pr were detected through X-ray absorption spectroscopy analysis. In contrast to (Ce,Pr)OBiS2 and (La,Ce)OBiS2, the superconducting transition temperature of (La,Ce,Pr)OBiS2 increased with increasing concentrations of the tetravalent state at the R-site.
