论文标题
低能电子辐照的4H-SIC中的M-中心
M-center in low-energy electron irradiated 4H-SiC
论文作者
论文摘要
我们报告通过深层瞬态光谱（DLTS）和Laplace-DLTS研究的低能电子辐照的4H-SIC材料。电子辐照引入了以下深层缺陷：先前分配给碳间质相关缺陷的EH1和EH3，M-Center，M-Center，最近也分配给了碳间质缺陷的亚稳态缺陷。我们建议EH1和EH3与M1和M3相同，并将它们分别分配给C_I^（=）（H）和C_I^（0）（H）。此外，我们提供了直接的证据，表明Laplace-DLT可以用作区分与S1（VSI）和EH1（CI）相关的其他相同DLTS信号的出色工具。
We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects, and M-center, a metastable defect also recently assigned to carbon interstitial defects. We propose that EH1 and EH3 are identical to M1 and M3 and assign them to C_i^(= ) (h) and C_i^(0 ) (h), respectively. Moreover, we provide direct evidence that Laplace-DLTS can be used as an excellent tool to distinguish otherwise identical DLTS signals associated with S1 (VSi) and EH1 (Ci).
