论文标题

Janus Monolayer YBRI中的压电铁磁性:第一原则预测

Piezoelectric ferromagnetism in Janus monolayer YBrI: a first-principle prediction

论文作者

Guo, San-Dong, Wang, Meng-Xia, Tao, Yu-Ling, Liu, Bang-Gui

论文摘要

固有的铁磁和压电性的共存,即压电铁磁性(PFM),对于推进多功能自旋技术技术至关重要。在这项工作中,我们证明了Janus Monolayer YBRI是PFM,它在机械上是机械,机械和热稳定的。通过使用通用梯度近似以及$ u $(GGA+$ u $)方法研究了对YBRI物理特性的电子相关效应。对于平面外磁各向异性,YBRI是Ferrovalley(FV)材料,山谷分裂大于所考虑的$ U $范围的82 MeV。可以在平面内电场下实现异常的山谷大厅效应(AVHE)。但是,对于平面磁各向异性,YBRI是一种常见的铁磁(FM)半导体。在考虑固有的磁各向异性时,YBRI的易于轴始终是磁各向异性能量(MAE)从0.309 MeV到0.237 MeV($ u $ = 0.0 ev至3.0 eV)。但是,可以通过外部磁场从面内到平面方向调节磁化强度,然后导致山谷极化的发生。此外,在YBRI单层中,缺失的中心对称性以及镜子对称性破坏导致平面内和平面外的压电。在典型的$ u $ = 2.0 eV处,$ d_ {11} $预计为-5.61 pm/v,它高于或与其他二维(2D)已知材料的$或比较。 YBRI的电子和压电性能可以通过施加双轴菌株有效调节。例如,拉伸应变可以增强山谷分裂和$ d_ {11} $(绝对值)。 YBRI的预测居里温度高于实验合成的2D铁磁材料$ \ MATHRM {CRI_3} $和$ \ MATHRM {CR_2GE_2TE_6} $。

Coexistence of intrinsic ferromagnetism and piezoelectricity, namely piezoelectric ferromagnetism (PFM), is crucial to advance multifunctional spintronic technologies. In this work, we demonstrate that Janus monolayer YBrI is a PFM, which is dynamically, mechanically and thermally stable. Electronic correlation effects on physical properties of YBrI are investigated by using generalized gradient approximation plus $U$ (GGA+$U$) approach. For out-of-plane magnetic anisotropy, YBrI is a ferrovalley (FV) material, and the valley splitting is larger than 82 meV in considered $U$ range. The anomalous valley Hall effect (AVHE) can be achieved under an in-plane electric field. However, for in-plane magnetic anisotropy, YBrI is a common ferromagnetic (FM) semiconductor. When considering intrinsic magnetic anisotropy, the easy axis of YBrI is always in-plane with magnetic anisotropy energy (MAE) from 0.309 meV to 0.237 meV ($U$=0.0 eV to 3.0 eV). However, the magnetization can be adjusted from the in-plane to off-plane direction by external magnetic field, and then lead to the occurrence of valley polarization. Moreover, missing centrosymmetry along with mirror symmetry breaking results in both in-plane and out-of-plane piezoelectricity in YBrI monolayer. At a typical $U$=2.0 eV, the $d_{11}$ is predicted to be -5.61 pm/V, which is higher than or compared with ones of other two-dimensional (2D) known materials. The electronic and piezoelectric properties of YBrI can be effectively tuned by applying a biaxial strain. For example, tensile strain can enhance valley splitting and $d_{11}$ (absolute value). The predicted Curie temperature of YBrI is higher than those of experimentally synthesized 2D ferromagnetic materials $\mathrm{CrI_3}$ and $\mathrm{Cr_2Ge_2Te_6}$.

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