论文标题
关于在MOSFET中的氧化物电荷的波动，直至深度低温温度
On the fluctuation-dissipation of the oxide trapped charge in a MOSFET operated down to deep cryogenic temperatures
论文作者
论文摘要
提出了对氧化物捕获的电荷噪声的分析，向深度低温温度进行了操作。为此，在非常低的温度条件下进行了Sio2/Si Mos界面处的界面陷阱电导GP和氧化物捕获的电荷噪声SQT的重新介绍，而Fermi-DiRAC统计适用。建立了氧化物捕获的电荷噪声SQT与界面陷阱电导GP之间的新关系，显示了在非常低温下Nyquist关系的不足。最后，氧化物捕获电荷1/F噪声的新公式超出了经典的玻尔兹曼表达，它是根据氧化物陷阱密度和有效的温度占退化统计量的开发的。
An analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance Gp and oxide trapped charge noise SQt at the SiO2/Si MOS interface is conducted under very low temperature condition, where Fermi-Dirac statistics applies. A new relation between the oxide trapped charge noise SQt and the interface trap conductance Gp is established, showing the inadequacy of the Nyquist relation at very low temperature. Finally, a new formula for the oxide trapped charge 1/f noise, going beyond the classical Boltzmann expression, is developed in terms of oxide trap density and effective temperature accounting for degenerate statistics.
