论文标题
基于光子积分电路掺杂的放大器
A photonic integrated circuit based erbium-doped amplifier
论文作者
论文摘要
掺杂的纤维放大器已彻底改变了长途光学通信和激光技术。 Erbium离子可以平均提供光子整合电路中有效的光学扩增的基础。但是，由于输出功率不足，因此这种方法仍然不切实际。在这里，我们演示了一个基于光子整合电路的ERBIUM放大器，该放大器达到145 MW输出功率和30 dB的小信号增益 - 与商用纤维放大器以及最新的IIII-V异质集成的半导体放大器相当。我们通过将离子植入施加到最近出现的具有仪表尺度长度波导的超减速Si3n4光子整合电路中来实现这一目标。我们利用该设备将低噪声光子微波生成所需的孤子微角菌的输出功率增加100倍，或者是波长 - 分段多路复用光学通信所需的源。带有增益的SI3N4光子积分电路可以使广泛的基于纤维的设备（例如高脉冲 - 能量飞秒模式锁定激光器）进行微型化。
Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could equally provide a basis for efficient optical amplification in photonic integrated circuits. However, this approach has thus far remained impractical due to insufficient output power. Here, we demonstrate a photonic integrated circuit based erbium amplifier reaching 145 mW output power and more than 30 dB small-signal gain -- on par with commercial fiber amplifiers and beyond state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. We achieve this by applying ion implantation to recently emerged ultralow-loss Si3N4 photonic integrated circuits with meter-scale-length waveguides. We utilize the device to increase by 100-fold the output power of soliton microcombs, required for low-noise photonic microwave generation or as a source for wavelength-division multiplexed optical communications. Endowing Si3N4 photonic integrated circuits with gain enables the miniaturization of a wide range of fiber-based devices such as high-pulse-energy femtosecond mode-locked lasers.
