论文标题

高底物覆盖范围的生长可以减少2D材料的晶界粗糙度

Growth at high substrate coverage can decrease the grain boundary roughness of 2D materials

论文作者

Reis, Fabio D. A. Aarão, Marguet, Bastien, Pierre-Louis, Olivier

论文摘要

晶界粗糙度可以影响二维材料的电子和机械性能。这种粗糙度取决于形成二维材料的生长过程。为了研究控制粗糙度的关键机制,我们进行了一个简单模型的动力学蒙特卡洛模拟,其中包括粒子附着,分离和扩散。我们研究了在生长过程中两个薄片之间的间隙的封闭,以及在广泛的模型参数中的随后形成晶界(GB)。鉴定出众所周知的近平衡(附着限制)和不稳定(扩散限制)生长方案,但是当前体通量足够高以充分覆盖边缘之间的间隙时,我们也观察到第三个制度。这种高覆盖范围构成具有空间不相关的粗糙度的GB,迅速放松到更平滑的配置。推断数值结果(在理论方法的支持下)到某些微米的边缘长度和间隙宽度,我们证实了该制度的优势,即比近平衡条件更快地产生最小的粗糙度GB。这表明具有光滑GB的二维材料有效生长的意外途径。

Grain boundary roughness can affect electronic and mechanical properties of two-dimensional materials. This roughness depends crucially on the growth process by which the two-dimensional material is formed. To investigate the key mechanisms that govern the roughness, we have performed kinetic Monte Carlo simulations of a simple model that includes particle attachment, detachment, and diffusion. We have studied the closure of the gap between two flakes during growth, and the subsequent formation of the grain boundary (GB) for a broad range of model parameters. The well known near-equilibrium (attachment-limited) and unstable (diffusion-limited) growth regimes are identified, but we also observe a third regime when the precursor flux is sufficiently high to fully cover the gap between the edges. This high coverage regime forms GBs with spatially uncorrelated roughness, which quickly relax to smoother configurations. Extrapolating the numerical results (with support from a theoretical approach) to edge lengths and gap widths of some micrometers, we confirm the advantage of this regime to produce GBs with minimal roughness faster than near-equilibrium conditions. This suggests an unexpected route towards efficient growth of two-dimensional materials with smooth GBs.

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