论文标题
室温门可调的非互惠电荷传输晶格匹配的INSB/CDTE异质结构
Room Temperature Gate Tunable Non Reciprocal Charge Transport in Lattice Matched InSb/CdTe Heterostructures
论文作者
论文摘要
对称性的操作提供了一种有效的方法来调整固态系统中的物理订单。随着反转和时反转对称性的破坏，非重新磁通磁电流可能会出现在各种非磁系统中以富集自旋物理学。在这里，我们报告了晶格匹配的INSB/CDTE膜中的单向磁电阻（UMR）的观察到室温。 Benefiting from the strong built-in electric field of $0.13 \mathrm{~V} \cdot \mathrm{nm}^{-1}$ in the hetero-junction region, the resulting Rashba-type spin-orbit coupling and quantum confinement warrant stable angular-dependent second-order charge current with the non-reciprocal coefficient 1-2 orders of magnitude larger than most 298 K处的非中心对称材料。更重要的是，这种异质结构构型可实现高效的栅极调整，使整流响应增强UMR振幅的增强40％。我们的结果主张狭窄的差距半导体的混合动力系统，具有稳健的二维界面自旋纹理，作为追求可控制的手性旋转轨道设备和应用的合适平台。
The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe film up to room temperature. Benefiting from the strong built-in electric field of $0.13 \mathrm{~V} \cdot \mathrm{nm}^{-1}$ in the hetero-junction region, the resulting Rashba-type spin-orbit coupling and quantum confinement warrant stable angular-dependent second-order charge current with the non-reciprocal coefficient 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298 K. More importantly, this heterostructure configuration enables highly-efficient gate tuning of the rectification response in which the enhancement of the UMR amplitude by 40% is realized. Our results advocate the narrow-gap semiconductor-based hybrid system with the robust two-dimensional interfacial spin texture as a suitable platform for the pursuit of controllable chiral spin-orbit devices and applications.
