论文标题
降低具有两步蚀刻刻面的光学泵送的Algan/Gan激光器中的激光阈值
Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets
论文作者
论文摘要
我们报告了一个两步的过程，以在Algan/gan中获得平滑而垂直的{10-10} M平面相，单独的限制异质结构旨在制造以355 nm发射的紫外线激光器。该过程由RIE-ICP的干燥蚀刻组成，结合了使用基于KOH的溶液的晶体学选择性湿蚀刻过程。 Algan结构的不同晶体学平面之间的湿蚀刻速率的各向异性允许制造平面和平行的面，而不会降解多层合奏。与机械分裂制造的腔相比，激光器的光学性能在使用两步过程时显示出很大的改进，而光学泵送下的激光阈值将减小到几乎一半。
We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP combined with a crystallographic-selective wet etching process using a KOH-based solution. The anisotropy in the wet etching rates between the different crystallographic planes of the AlGaN structure, allows the fabrication of flat and parallel facets without a degradation of the multilayered ensemble. The optical performance of the lasers display a major improved when using the two-step process for the definition of the cavity, in comparison to cavities fabricated by mechanical cleaving, with the lasing threshold under optical pumping being reduced to almost half.
