论文标题
ALDO2，用于基于SIPM的HEP探测器的多功能RAD线性调节器
ALDO2, a multi-function rad-hard linear regulator for SiPM-based HEP detectors
论文作者
论文摘要
Aldo2是一种多功能，可调节的，低的辍学线性调节器，以ONSEMI I3T80 0.35〜 $ M $ M HV CMOS技术用于采用硅光塑料（SIPMS）的HEP检测器。该芯片具有四个独立的调节器，两个低压通道（最大3.3 V），用于过滤和稳定前端芯片的电源，以及两个HV通道（最大70 V），专门设计用于为SIPM的阵列提供偏置电压。每个调节剂都可以独立关闭，并受到过度和过度的保护。 HV调节器还实施电路以监视SIPM阵列的偏置电流，从而可以执行I-V曲线，从而在检测器寿命期间微调SIPM阵列的工作点。 The chip adopts radiation hardening techniques and has been fully qualified up to a TID of 20 Mrad, a 1-MeV-equivalent neutron fluence of $10^{15}$ cm$^{-2}$, and with heavy ions up to 40 MeV cm$^2$ mg$^{-1}$ LET and $10^{10}$ cm$^{-2}$ cumulative fluence.该芯片将在HL-LHC相的两个CMS探测器，枪管正时检测器（BTL）和高粒度量热仪（HGCAL）中安装。
ALDO2 is a multi-function, adjustable, low dropout linear regulator designed in onsemi I3T80 0.35~$μ$m HV CMOS technology for use in HEP detectors that adopt silicon photomultipliers (SiPMs). The chip features four independent regulators, two low voltage channels (max 3.3 V) used to filter and stabilize the power supply of front-end chips, and two HV channels (max 70 V), specifically designed to provide the bias voltage to arrays of SiPMs. Each regulator can be independently shut down and is protected for over-current and over-temperature. The HV regulators also implement a circuit to monitor the bias current of the SiPM arrays, allowing to perform I-V curves and thus to fine-tune the working point of the SiPM arrays during the detector lifetime. The chip adopts radiation hardening techniques and has been fully qualified up to a TID of 20 Mrad, a 1-MeV-equivalent neutron fluence of $10^{15}$ cm$^{-2}$, and with heavy ions up to 40 MeV cm$^2$ mg$^{-1}$ LET and $10^{10}$ cm$^{-2}$ cumulative fluence. The chip will be installed in two CMS detectors in the HL-LHC phase, the Barrel Timing Detector (BTL) and the High Granularity Calorimeter (HGCAL).
