论文标题
Volkov-Pankratov在2D材料中态：结构孤子的激发态
Volkov-Pankratov states in a 2d material: excited states of a structural soliton
论文作者
论文摘要
我们表明，部分位错是在双层石墨烯中自然出现的缺陷，它具有质量反转Volkov-pankratov（VP）状态的类似物，即在拓扑上的非平凡界面处的激发态的频谱。与山谷指数变化产生的位错状态相反，这种状态（i）都存在和不存在层间偏置的情况，即金属和绝缘体积和（ii）具有不同的电子和孔结合状态，其数量与脱位宽度成正比。最近在3D拓扑绝缘子的异质口气中发现，它们在2D材料的部分位错中的存在为他们的调查打开了丰富的结构游乐场，我们证明，位错类型，即螺钉或端子，脱位宽度以及脱位宽度，两者都在创建拓扑状态的拓扑光谱中起着决定性的作用。
We show that partial dislocations, defects that naturally arise in bilayer graphene, host an analogue of the mass inversion Volkov-Pankratov (VP) states, the spectrum of excited states at a topologically non-trivial interface. In contrast to the dislocation states arising from the change in valley Chern index, such states (i) exist both with and without an interlayer bias, i.e. for metallic as well as insulating bulk and (ii) have distinct electron and hole bound states, whose number is proportional to the dislocation width. Recently discovered at heterojunctions of 3d topological insulators, their existence at the partial dislocations of a 2d material opens a rich structural playground for their investigation, and we demonstrate that the dislocation type, i.e. screw or edge, as well as the dislocation width, both play a decisive role in the creation of a topological spectrum of exited states.
