论文标题
RF使用隧道屏障的超导式超导导向器 - 驱动器连接器使用隧道屏障的低噪声放大器和功率放大器
RF Low Noise Amplifiers and Power Amplifiers using Tunnelling Barrier modulated Superconductor-Semiconductor-Superconductor Junctions
论文作者
论文摘要
在高性能的RF收发器中，其推力是在较低的噪声LNA和高功率高速PA上。与其他基带相比，性能权衡迫使许多解决方案将LNA和PA在单独的模具上放置。通常在GAAS或INP中制造，需要与信号链的其余部分正确连接，从而导致信号完整性问题。此类技术的应用范围从国防，航空航天到科学仪器。在本文中，我们建议使用可控栅极末端的超导体 - 触发器 - 驱动器（SC-SM-SC）交界器来调节隧道电阻。在典型的谐振坦克LNA或阻抗匹配的PA中的这种布置将减少寄生电容，从而导致更高的频率运行。同样，由于库珀配对玻色子是散装载体，由于载体载体和携带者武器散射引起的噪音将远低于其传统的CMOS对应物。我们的计算表明，它可以在具有20dB增益到36GHz的LNA中使用，并在PA中用于-10dBM功率直至350GHz。
In high-performance RF transceivers the thrust of has been on lower noise LNAs and high-power high-speed PAs. The performance trade-off has forced many solutions to have the LNA and PA on a separate die compared to the rest of baseband. Often fabricated in GaAs or InP, they need to be properly interfaced with the rest of signal chain leading to signal integrity issues. Applications for such technologies range from defence, aerospace to scientific instrumentation. In this paper we propose a device using superconductor-semiconductor-superconductor (SC-Sm-SC) junction with a controllable gate terminal to modulate the tunnelling resistance. This arrangement in a typical resonant-tank LNA or an impedance matching PA would reduce the parasitic capacitances leading to higher frequency operation. Also by virtue of Cooper-pair bosons being the bulk carriers, noise due to carrier-carrier and carrier-lattice scattering will be much lower than its conventional CMOS counterparts. Our calculation shows that it can be used in a LNA with 20dB gain till 36GHz and in a PA to deliver -10dBm power till 350GHz.
