论文标题
纳米晶体驱动的电荷配置备忘录
Nanocryotron-driven Charge Configuration Memristor
论文作者
论文摘要
冷冻计算 - 经典和量子都受到没有合适的冷冻记忆的严重限制。在能源效率和速度方面，挑战已经闻名了数十年，但到目前为止，传统技术无法提供足够的性能。在这里，我们提出了一种新型的非易失性存储器设备，该设备结合了超导纳米线和基于分层二分法材料中电荷有序状态之间的切换的全电子电荷构型概述（CCM）。我们研究了使用NBTIN纳米线和1T-TAS2 CCM制造的这种设备的时间障碍和电流 - 电压特性。通过模拟应用程序多功能性的超导顺序参数，可以忠实地再现设备的动态响应。与单个磁通量逻辑兼容的固有的超高能效率和设备的速度，导致有希望的新内存概念用于冷冻计算和量子计算外围设备。
Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenge both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not been able to deliver adequate performance. Here we present a novel non-volatile memory device which incorporates a superconducting nanowire and an all-electronic charge configuration memristor (CCM) based on switching between charge-ordered states in a layered dichalcogenide material. We investigate the time-dynamics and current-voltage characteristics of such a device fabricated using a NbTiN nanowire and a 1T-TaS2 CCM. The observed dynamical response of the device is faithfully reproduced by modelling of the superconducting order parameter showing versatility of application. The inherent ultrahigh energy efficiency and speed of the device, which is compatible with single flux quantum logic, leads to a promising new memory concept for use in cryo-computing and quantum computing peripheral devices.
