论文标题
可见的盲ZnMGo胶体量子点下调器将硅CMOS传感器的光谱覆盖范围扩展到紫外线，并启用紫外线歧视
Visible-blind ZnMgO Colloidal Quantum Dot Downconverters expand Silicon CMOS Sensors Spectral Coverage into Ultraviolet and enable UV Band Discrimination
论文作者
论文摘要
在从健康和安全到工业和环境监测应用的许多领域中，紫外线（UV）辐射的选择性光谱检测非常重要。本文中，我们报告了一种无毒的，可见的，无机量子点（QD）的感应方案，将硅CMOS传感器的光谱扩展到紫外线中，从而在不影响可见的和紫外线歧视中的传感器性能的情况下可以有效地进行紫外线检测。报道的方案采用氧化锌（ZnMGO）QD，在可见的紫外线上具有可调节的吸收和高光致发光量子产率（PLQY）。这些QD的有效发光和较大的Stokes转移已被利用，以充当有效的下调材料，从而增强了Si-PhotoDeTector（SI-PD）的UV敏感性。与QDS合成的SI-PD导致在260 nm处的0.83 mA/W到7.5 mA/W的光呼率提高了9倍。利用这些QD的可调节性，我们使用两个不同的紫外线识别方案进一步报告，使用两个不同的带隙Znmgo QD堆叠在串联体系结构中，其光谱发射颜色取决于紫外线激发光。下调堆栈可以使用标准的CMOS图像传感器（相机）或肉眼对紫外线进行轻松歧视，并避免使用复杂的光学元件。
Selective spectral detection of ultraviolet (UV) radiation is highly important across numerous fields from health and safety to industrial and environmental monitoring applications. Herein, we report a non-toxic, visible-blind, inorganic quantum dot (QD)-based sensing scheme that expands the spectral coverage of Silicon CMOS sensors into the UV, enabling efficient UV detection without affecting the sensor performance in the visible and UV-band discrimination. The reported scheme employs zinc magnesium oxide (ZnMgO) QDs with compositionally tunable absorption across UV and high photoluminescence quantum yield (PLQY) in the visible. The efficient luminescence and large stokes shift of these QDs have been exploited herein to act as an efficient downconverting material that enhances the UV sensitivity of Si-photodetector (Si-PD). A Si-PD integrated with the QDs results in a nine-fold improvement in photoresponsivity from 0.83 mA/W to 7.5 mA/W at 260 nm. Leveraging the tunability of these QDs we further report on a simple UV band identification scheme, using two distinct band gap ZnMgO QDs stacked in a tandem architecture whose spectral emission color depends on the UV-band excitation light. The downconverting stack enables facile discrimination of UV light using a standard CMOS image sensor (camera) or by the naked eye and avoids the use of complex optics.
