论文标题

铁磁MNGA薄膜中的菱形费米表面,垂直磁各向异性

Rhombic Fermi surfaces in a ferromagnetic MnGa thin film with perpendicular magnetic anisotropy

论文作者

Kobayashi, M., Khang, N. H. D., Takeda, T., Araki, K., Okano, R., Suzuki, M., Kuroda, K., Yaji, K., Sugawara, K., Souma, S., Nakayama, K., Yamauchi, K., Kitamura, M., Horiba, K., Fujimori, A., Sato, T., Shin, S., Tanaka, M., Hai, P. N.

论文摘要

Mn $ _ {1-x} $ ga $ _x $(mnga)带有$ l1_0 $结构是一种铁磁材料,具有强烈的垂直磁磁晶状体各向异性。尽管MNGA薄膜已成功地展开并研究了各种Spintronics设备,但仍然缺乏对其电子结构的基本理解。为了解决这个问题,我们使用角度分辨光发射光谱(ARPES)研究了$ L1_0 $ -MNGA薄膜。我们已经观察到一个大型费米表面,其菱形形状在$ k_x $ -k_y $ $ $ $ $ $ $的平面上重叠相邻的费米表面。频段结构的$ k_z $依赖性表明,ARPE观察到的频段分散来自MNGA的三维频段结构,由$ \ sqrt {2} \ times \ times \ sqrt {2} $ rectruction折叠。菱形费米表面一角的带分散形成了一个电子口袋,$ k_z $依赖性较弱。从ARPES图像中估算出越过拐角附近费米水平的频段的有效质量和迁移率。基于实验发现,讨论了基于MNGA的异质结构中观察到的带状结构与自旋依赖性特性之间的关系。

Mn$_{1-x}$Ga$_x$ (MnGa) with the $L1_0$ structure is a ferromagnetic material with strong perpendicular magneto-crystalline anisotropy. Although MnGa thin films have been successfully grown epitaxially and studied for various spintronics devices, fundamental understandings of its electronic structure are still lacking. To address this issue, we have investigated $L1_0$-MnGa thin films using angle-resolved photoemission spectroscopy (ARPES). We have observed a large Fermi surface with a rhombic shape in the $k_x$-$k_y$ plane overlapping neighboring Fermi surfaces. The $k_z$ dependence of the band structure suggests that the band dispersion observed by ARPES comes from the three-dimensional band structure of MnGa folded by a $\sqrt{2} \times \sqrt{2}$ reconstruction. The band dispersion across the corner of the rhombic Fermi surface forms an electron pocket with a weak $k_z$ dependence. The effective mass and the mobility of the bands crossing the Fermi level near the corner are estimated from the ARPES images. Based on the experimental findings, the relationship between the observed band structure and the spin-dependent properties in MnGa-based heterostructures is discussed.

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