论文标题
外部压力对窄间隙半导体CE $ _ {3} $ cd $ _ {2} $ as $ _ {6} $的影响
Effects of external pressure on the narrow gap semiconductor Ce$_{3}$Cd$_{2}$As$_{6}$
论文作者
论文摘要
在这里，我们将最近发现的CE $ _ {3} $ cd $ _ {2} $的磁性和电子属性为$ _ {6} $。在环境压力下，ce $ _ {3} $ cd $ _ {2} $ as $ _ {6} $以74（1）〜MEV的激活差距为半导体行为。在136〜K时，电阻率突然增加和特定热的峰值与电荷密度波变化一致。在低温下，CE $^{3+} $离子的抗磁磁序在$ t _ {\ rm n} = 4.0 $ 〜k以下，沿$ c $ -axis沿着磁性硬轴和A $γ_{6} = | \ pm1/2 \ rangle $ doublet Interce。外部压力的施加强烈抑制了电荷密度波顺序，该电荷密度波顺序完全被抑制在0.8（1）〜GPA以上，并诱导金属基态。在2〜K以上没有检测到超导性的证据。相反，在3.8（1）〜GPA时达到5.3〜k的过渡温度，抗铁磁状态受到青睐。值得注意的是，表征反铁磁顺序的电阻率异常随着压力的增加而变化，表明CE $ _ {3} $ cd $ _ {2} $在压力下可能存在两个不同的磁性阶段。订购中的这种更改似乎与$ t _ {\ rm cdw} $和$ t _ {\ rm n} $ lines的穿越相关联。
Here we report the magnetic and electronic properties of recently discovered Ce$_{3}$Cd$_{2}$As$_{6}$. At ambient pressure, Ce$_{3}$Cd$_{2}$As$_{6}$ presents a semiconducting behavior with an activation gap of 74(1)~meV. At 136~K, a sudden increase of the electrical resistivity and a peak in specific heat are consistent with a charge density wave transition. At low temperatures, antiferromagnetic order of the Ce$^{3+}$ ions occurs below $T_{\rm N} = 4.0$~K with a magnetic hard axis along the $c$-axis and a $Γ_{6} = |\pm1/2\rangle$ doublet ground state. The application of external pressure strongly suppresses the charge density wave order, which is completely suppressed above 0.8(1)~GPa, and induces a metallic ground state. No evidence for superconductivity is detected above 2~K. Conversely, the antiferromagnetic state is favored by pressure, reaching a transition temperature of 5.3~K at 3.8(1)~GPa. Notably, the resistivity anomaly characterizing the antiferromagnetic order changes with increasing pressure, indicating that two different magnetic phases might be present in Ce$_{3}$Cd$_{2}$As$_{6}$ under pressure. This change in ordering appears to be associated to the crossing of the $T_{\rm CDW}$ and $T_{\rm N}$ lines.
