论文标题
使用Microbubbles的复杂应变场揭示Zrte $ _5 $的拓扑相图
Revealing the topological phase diagram of ZrTe$_5$ using the complex strain fields of microbubbles
论文作者
论文摘要
拓扑材料构成了强大的特性,由于散装电子系统的全球拓扑特性,不受微观扰动的影响。尤其要追求通过轻松调整外部参数来更改拓扑不变的材料。戊吡啶锆(Zrte $ _5 $)是靠近拓扑相变边界附近的少数实验可用材料之一,从而使其不变性通过机械应变切换。在这里,我们明确地通过从头开始计算和直接测量局部电荷密度的结合来识别拓扑绝缘子 - 金属转变是应变的函数。我们的模型定量地描述了在几层Zrte $ _5 $的气泡中发现的对复杂应变模式的响应,而无需拟合参数,从而重现了使用扫描隧道显微镜观察到的带隙的机械变形截止。我们计算了Zrte $ _5 $的拓扑相图,并以平衡确定相位,从而使设备体系结构的设计利用了系统的唯一拓扑切换特性。
Topological materials host robust properties, unaffected by microscopic perturbations, owing to the global topological properties of the bulk electron system. Materials in which the topological invariant can be changed by easily tuning external parameters are especially sought after. Zirconium pentatelluride (ZrTe$_5$) is one of a few experimentally available materials that reside close to the boundary of a topological phase transition, allowing the switching of its invariant by mechanical strain. Here, we unambiguously identify a topological insulator - metal transition as a function of strain, by a combination of ab initio calculations and direct measurements of the local charge density. Our model quantitatively describes the response to complex strain patterns found in bubbles of few layer ZrTe$_5$ without fitting parameters, reproducing the mechanical deformation dependent closing of the band gap observed using scanning tunneling microscopy. We calculate the topological phase diagram of ZrTe$_5$ and identify the phase at equilibrium, enabling the design of device architectures which exploit the unique topological switching characteristics of the system.