论文标题
CMOS技术上的单片主动像素传感器
Monolithic Active Pixel Sensors on CMOS technologies
论文作者
论文摘要
对撞机检测器至少要利用硅探测器的分辨率和准确性至少四十年。未来的山着人将需要大面积的硅传感器，以进行低质量跟踪器和采样量热法。单层活跃的像素传感器（地图），其中SI二极管和读出电路在同一像素中组合在一起，并且可以在某些标准的CMOS过程中制造，是一种有希望的高颗粒性和光探测器的技术。在本文中，我们审查1）在未来山谷实验的跟踪器和电磁量热法（ECAL）的地图上的要求，2）持续为BNL的电子离子对撞机（EIC）的专用地图的努力，为此，EIC硅已经实例化了EIC Silicon，以及Mev $ spriand $ vermiix $ -saps trackiix $ -saps trassix $ -saps yriix $γ。
Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic Active Pixel Sensors (MAPS), in which Si diodes and readout circuitry are combined in the same pixels, and can be fabricated in some of standard CMOS processes, are a promising technology for high-granularity and light detectors. In this paper we review 1) the requirements on MAPS for trackers and electromagnetic calorimeters (ECal) at future colliders experiments, 2) the ongoing efforts towards dedicated MAPS for the Electron-Ion Collider (EIC) at BNL, for which the EIC Silicon Consortium was already instantiated, and 3) space-born applications for MeV $γ$-ray experiments with MAPS based trackers (AstroPix).
