论文标题
紧张的$γ$ - gese中可调的散装光伏效应
Tunable bulk photovoltaic effect in strained $γ$-GeSe
论文作者
论文摘要
最近，Lee \ textit {et。 al。} [nano lett。 \ textbf {21}，4305（2021）]在极相中新合成的单钙化剂GESE，称为$γ$ - 相。在这项工作的激励下，我们研究了$γ$ gese的转移电流及其通过平面单轴菌株的可调性。使用第一原理计算，我们发现了紧张的$γ$ gese系统的电子结构。然后，我们计算各种应变处的频率偏移电流电导率。证明可调节性可将移位电流提高到$ \ sim $ 20 $ 20 $ $ $ a/v $^2 $。此外，光电流可以通过轻应变倒转。明显地，在零频率的极限中发现异常行为，这可以指示带反转和由菌株驱动的潜在拓扑相变。我们的结果表明，偏移电流可以是$γ$ - gese的批量电子状态的切实证明。
Recently, Lee \textit{et. al.} [Nano Lett. \textbf{21}, 4305 (2021)] newly synthesized monochalcogenide GeSe in a polar phase, referred to as $γ$-phase. Motivated by this work, we study shift current of $γ$-GeSe and its tunability via an in-plane uniaxial strain. Using first-principles calculations, we uncover the electronic structure of the strained $γ$-GeSe systems. We then calculate frequency-dependent shift current conductivities at various strains. The tunability is demonstrated to enhance the shift current up to $\sim$ 20 $μ$A/V$^2$. Moreover, the direction of shift current can be inverted by a light strain. Markedly, an anomalous behavior is found in the zero-frequency limit, which can be an indicative of band inversion and a potential topological phase transition driven by the strain. Our results suggest that shift current can be a tangible prove of bulk electronic states of $γ$-GeSe.
