论文标题
朝着低下30nm接触的栅极音高，分叉接触和动态掺杂的纳米片，以增强SI和2D材料设备缩放
Towards sub-30nm Contacted Gate Pitch, Forked Contact and Dynamically-Doped Nanosheets to Enhance Si and 2D Materials Device Scaling
论文作者
论文摘要
我们提出了一种新型的分叉接触，动态掺杂的多重晶体管作为积极缩放的纳米片设备中Si和2D材料的最终缩放层。使用准确的DFT-NEGF原子仿真基本原理和细胞布局外部功能，我们展示了优越和最佳的设备特性和转化器能量 - 延迟到低于-30 nm的音高，即与纳米片MOSFET参考相比，比较10 nm的扩展增强。
We propose a novel Forked-Contacts, Dynamically-Doped Multigate transistor as ultimate scaling booster for both Si and 2D materials in aggressively-scaled nanosheet devices. Using accurate dissipative DFT-NEGF atomistic-simulation fundamentals and cell layout extrinsics, we demonstrate superior and optimal device characteristics and invertor energy - delays down to sub-30-nm pitches, i.e., a 10 nm scaling boost compared to the nanosheet MOSFET references.
