论文标题
钒掺杂β-GA2O3单晶：生长，光学和Terahertz表征
Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization
论文作者
论文摘要
我们通过光浮动区技术报告了电抗性钒型β-GA2O3单晶的生长。通过仔细控制与通常的N型V型β-GA2O3（NE〜10^（18）/cm^3）相比，具有非常高的电阻率的生长参数V掺杂晶体。与未掺杂和N掺杂的晶体相比，这种高电阻V型B-GA2O3的光学特性显着差异。我们研究了依赖极化的拉曼光谱，偏振依赖性透射，光波长范围内的温度依赖性光致发光以及在0.2-2.6 THz范围内的THZ传输特性。 V掺杂的GA2O3晶体显示出强烈的双折射，折射率对比度为0.3+-0.02在1 THz时，这表明它是THZ区域光学应用的理想材料。
We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-doped crystals with very high electrical resistivity compared to the usual n-type V-doped beta-Ga2O3 (ne~10^(18)/cm^3) can be synthesized. The optical properties of such high resistive V-doped b-Ga2O3 are significantly different compared to the undoped and n-doped crystals. We study the polarization-dependent Raman spectra, polarization-dependent transmission, temperature-dependent photoluminescence in the optical wavelength range and the THz transmission properties in the 0.2 - 2.6 THz range. The V-doped insulating Ga2O3 crystals show strong birefringence with refractive index contrast Dn of 0.3+-0.02 at 1 THz, suggesting it to be an ideal material for optical applications in the THz region.
