论文标题
利用$ _ {x} $ ga $ _ {1 -x} $的助攻阴影效果作为应变和弯曲工程的非对称外壳增长 - in $ _ {x} $ ga $ _ $ _ {1 -x}
Exploiting of flux shadowing effect on In$_{x}$Ga$_{1-x}$As asymmetric shell growth for strain and bending engineering in GaAs - In$_{x}$Ga$_{1-x}$As core - shell NW arrays
论文作者
论文摘要
在这里，我们通过分子束外延（MBE）报告了（x）ga（1-x）中的（x）ga（1-x）的非均匀壳生长。该增长是在预制的硅底物上实现的，其音高尺寸（P）范围从0.1 um到10 um。考虑到相对于MBE细胞的优选弯曲方向以及底物模式的布局，我们能够修改沿NW生长轴的应变分布和随后的弯曲轮廓。对于具有较高数量密度的NW阵列，NWS的弯曲曲线由直（几乎不变）和弯曲（紧张的）段组成，其长度不同，取决于音高大小。对弯曲和直的NW段长度的精确控制为设计具有长度选择性应变分布的基于NW的设备提供了食谱。
Here we report on non-uniform shell growth of In(x)Ga(1-x)As onto GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with pitch size (p) ranging from 0.1 um to 10 um. Considering the preferable bending direction with respect to the MBE cells as well as the layout of the substrate pattern, we are able to modify the strain distribution along the NW growth axis and the subsequent bending profile. For NW arrays with high number density, the obtained bending profile of the NWs is composed of straight (barely-strained) and bent (strained) segments with different lengths which depend on the pitch size. A precise control of the bent and straight NW segment length provides a recipe to design NW based devices with length selective strain distribution.
