论文标题
增益和损失引起的拓扑绝缘阶段在非冬宫电路中
Gain and loss induced topological insulating phase in a non Hermitian electrical circuit
论文作者
论文摘要
在某些非富甲级系统中,在某些非省力系统中,旨在研究拓扑阶段,这些阶段在有收益和损失的情况下具有真正的本征频率。但是,由于难以引入受控的增益和损失,因此在量子系统或光子系统中实验实验中实现这种非热拓扑绝缘子的挑战是一项挑战。另一方面,主动电路组件的广泛选择为我们提供了前所未有的便利性和灵活性,并在电路中的非甲米特拓扑绝缘子方面提供了灵活性。在这里,我们报告了一维(1D)非铁拓扑回路的实验实现,该拓扑表现出拓扑保护的边缘状态,纯粹是由增益和损失诱导的。我们表明,通过调整电路中正/负电阻的值,我们的系统可以在不同的拓扑相区域之间切换。拓扑边缘状态和界面状态是在电路边缘和微不足道和非平凡电路之间的界面上观察到的,这些电路在中间间隙频率在拓扑上的突出阻抗峰表现出对电路参数的变化的强劲性。我们的工作为积极控制的拓扑系统打开了一个新的门户。
There have been considerable efforts devoted to the study of topological phases in certain non-Hermitian systems that possess real eigenfrequencies in the presence of gain and loss. However, it is challenging to experimentally realize such non-Hermitian topological insulators in either quantum or photonic systems, due to the difficulties in introducing controlled gain and loss. On the other hand, the wide choices of active circuit components provide us with unprecedented convenience and flexibility in engineering non-Hermitian topological insulators in electrical circuits. Here, we report experimental realization of a one-dimensional (1D) non-Hermitian topological circuit which exhibits topologically protected edge state purely induced by gain and loss. We show that by tuning the value of the positive/negative resistors in the circuit, our system can switch between different topological phase regions. The topological edge states and interface states are observed at the circuit edge and at the interface between a trivial and nontrivial circuit, which are manifested by a prominent impedance peak at the mid-gap frequency topologically robust to variations of circuit parameters. Our work opens a new gateway towards actively controllable topological systems.