论文标题
整体延伸式SWIR GESN PIN摄影器中的深色电流
Dark current in monolithic extended-SWIR GeSn PIN photodetectors
论文作者
论文摘要
硅上的扩展短波红外（E-SWIR）光电探测器（PDS）的整体整合是在实施可制造的，具有成本效益的传感和成像技术的备受追捧的。从这个角度来看，GESN PIN PDS已成为广泛研究的主题，因为它们的带隙可调性和硅兼容性。但是，由于生长缺陷，与商业III-V PD相比，这些PD的黑暗电流密度相对较高。在此，我们阐明了$ 2.6 \，μ$ m gesn pds $ 10 $ $ 10 $的机制。 It was found that in the temperature range of $293 \, $K -- $363 \,$K and at low bias, the diffusion and Shockley-Read-Hall (SRH) leakage mechanisms dominate the dark current in small diameter ($20 \, μ$m) devices, while combined SRH and trap assisted tunneling (TAT) leakage mechanisms are prominent in larger diameter ($160 \, μ$ m）设备。但是，在高反向偏置下，无论工作温度和设备尺寸如何，TAT泄漏机制都会成为主导。在这些设备中，有效的非辐射运营商寿命可达到$ \ sim 300 $ - $ 400 $ $ PS的低偏见。但是，由于TAT泄漏电流，随着偏差的增加，这种生命周期会逐渐减少。
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs have been the subject of extensive investigations because of their bandgap tunability and silicon compatibility. However, due to growth defects, these PDs suffer a relatively high dark current density as compared to commercial III-V PDs. Herein, we elucidate the mechanisms governing the dark current in $2.6 \, μ$m GeSn PDs at a Sn content of $10$ at.%. It was found that in the temperature range of $293 \, $K -- $363 \,$K and at low bias, the diffusion and Shockley-Read-Hall (SRH) leakage mechanisms dominate the dark current in small diameter ($20 \, μ$m) devices, while combined SRH and trap assisted tunneling (TAT) leakage mechanisms are prominent in larger diameter ($160 \, μ$m) devices. However, at high reverse bias, TAT leakage mechanism becomes dominant regardless of the operating temperature and device size. The effective non-radiative carrier lifetime in these devices was found to reach $\sim 300$ -- $400$ ps at low bias. Owing to TAT leakage current, however, this lifetime reduces progressively as the bias increases.
