论文标题
$ 1H $ - $转换 - 金属二进制基因元素的固有的自旋谷锁定用于导出电子的固有旋转锁定。
Intrinsic spin-valley locking for conducting electrons in metal-semiconductor-metal lateral hetero-structures of $1H$-transition-metal dichalcogenides
论文作者
论文摘要
原子分层材料的侧向源结构改变了原始晶体的电子特性，并提供了产生有用的单层材料的可能性。我们揭示了金属 - 甲基 - 金属侧侧向连接$ 1H $ - $ - 过渡 - 金属二核苷源本质上具有带有自旋 - 瓦利锁定的电子通道，例如栅极电极。从理论上讲，我们从侧向核连接处的电子结构和传输属性进行了研究，并表明异质结构在半导体的过渡金属二色源中通过$ k $和$ k'$ valleys产生导电频道，并限制了由于谷数依赖型传输效果而限制了每个Valley的导电电子的旋转。此外，理论研究表明，即使在长期的半导体区域中，WSE $ _2 $的异质结构也实现了山谷旋转锁定电子的高传输概率。杂项结构还提供了有用的电子传输属性，这是阶梯状的I-V特征。
Lateral-hetero structures of atomic layered materials alter the electronic properties of pristine crystals and provide a possibility to produce useful monolayer materials. We reveal that metal-semiconductor-metal lateral-hetero junctions of $1H$-transition-metal dichalcogenides intrinsically possess conducting channels of electrons with spin-valley locking, e.g., gate electrode. We theoretically investigate the electronic structure and transport properties of the lateral-hetero junctions and show that the hetero-structure produces conducting channels through the $K$ and $K'$ valleys in the semiconducting transition-metal dichalcogenide and restricts the spin of the conducting electrons in each valley due to the valley dependent charge transfer effect. Moreover, the theoretical investigation shows that the hetero-junction of WSe$_2$ realizes a high transmission probability for valley-spin locked electrons even in a long semiconducting region. The hetero-junction also provides a useful electronic transport property, a step-like I-V characteristic.
