论文标题
用基于硅的底物调整二碱的拓扑带隙
Tuning the Topological Band Gap of Bismuthene with Silicon-based Substrate
论文作者
论文摘要
一些二晶型单层（Bismuthene）的元稳定多晶型物可以托管拓扑阶段。但是，尚不清楚这些多晶型物是否能通过与底物的相互作用，是否保留其拓扑特性以及如何设计最佳基板以使拓扑阶段更加强大。我们证明，使用第一原理技术，即使在键合弱（即使键合弱）弱化的单层弱点，在碳化硅（SiO2）上，在碳化硅（SIC），硅（SI），二氧化硅（SIO2）上可以变得稳定，异质结构中的接近性相互作用对单层弱的电子结构具有重大影响。我们表明，范德华的相互作用和sublattice对称性的破坏是驱动电子结构变化的主要因素。我们的工作表明，底物相互作用可以增强二曲烯多晶型物的拓扑特性，并使其可用于实验研究和技术应用。
Some meta-stable polymorphs of bismuth monolayer (bismuthene) can host topologically nontrivial phases. However, it remains unclear if these polymorphs can become stable through interaction with a substrate, whether their topological properties are preserved, and how to design an optimal substrate to make the topological phase more robust. Using first-principles techniques we demonstrate that bismuthene polymorphs can become stable over silicon carbide (SiC), silicon (Si), silicon dioxide (SiO2) and that the proximity interaction in the heterostructures has a significant effect on the electronic structure of the monolayer, even when bonding is weak. We show that the van der Waals interactions and the breaking of the sublattice symmetry are the main factors driving changes in the electronic structure. Our work demonstrates that substrate interaction can strengthen the topological properties of bismuthene polymorphs and make them accessible for experimental investigation and technological applications.
