论文标题
FinFET和纳米线SRAM辐射硬度研究使用AB InitiO-TCAD模拟框架
FinFET and Nanowire SRAM Radiation Hardness Studies using Ab initio-TCAD Simulation Framework
论文作者
论文摘要
在本文中，我们研究了5nm节点鳍和纳米线（20nm栅极长度）及其在辐射下的相应SRAM的脆弱性。从头算工具，SRIM，PHIT和GEANT4用于在硅和硅阵线中找到中子和α颗粒的线性能量转移（LET）。然后，技术计算机辅助设计（TCAD）用于在FinFET，纳米线及其SRAM中找到最脆弱的事件位置和方向。使用完整的3D TCAD模拟，允许研究SRAM中的布局效应。发现在翻转能量方面，NW的稳健性比FinFET高约2-3倍。基于AB Initio-TCAD框架中的仿真，预计可以使用对α粒子免疫的NW设计SRAM。还可以预期，如果考虑设计技术合作（DTCO），则可以优化SRAM，以实现更健壮的辐射硬度。
In this paper, we study the vulnerability of 5nm node FinFET and nanowire (20nm gate length) and their corresponding SRAM under radiation. Ab initio tools, SRIM, PHITS, and GEANT4, are used to find the Linear Energy Transfer (LET) of neutron and alpha particles in Silicon and Silicon-Germanium. Technology Computer-Aided Design (TCAD) is then used to find the most vulnerable incident location and direction in FinFET, nanowire, and their SRAM. Full 3D TCAD simulation, which allows the study of layout effect in SRAM, is used. It is found that NW is about 2-3 times more robust than FinFET in terms of flipping energy. Based on the simulation in the ab initio-TCAD framework, it is projected that there is a possibility to design an SRAM using NW that is immune to alpha-particle. It is also expected that SRAM can be optimized for more robust radiation hardness if Design Technology Co-Optimization (DTCO) is taken into consideration.
